V20100S-E3/4W datasheet - High-Voltage Trench MOS Barrier Schottky Rectifier | V20100S-E3/4W.pdf by Vishay Siliconix | V20100S-E3/4W documentation view on EHAM.RU

V20100S-E3/4W - High-Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3/4W datasheet - High-Voltage Trench MOS Barrier Schottky Rectifier

Название/Part No:

V20100S-E3/4W

Описание/Description:

High-Voltage Trench MOS Barrier Schottky Rectifier

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

~/V20100S-E3/4W.pdf

V20100S-E3/4W и другие

Компонент	Описание	Производитель	PDF
V20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
V20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A	Vishay Siliconix
VB20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A	Vishay Siliconix
VB20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A	Vishay Siliconix
VI20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VI20100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A	Vishay Siliconix