V20120C-E3/4W datasheet

V20120C-E3/4W - Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Название/Part No:

V20120C-E3/4W

Описание/Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

V20120C-E3/4W и другие

Компонент	Описание	Производитель	PDF
V20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
V20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VB20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VF20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VI20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VI20120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix