W6NXD3K-0000 Datasheet

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W6NXD3K-0000 - Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W6NXD3K-0000 datasheet - Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition



Название/Part No:
W6NXD3K-0000

Описание/Description:
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Производитель/Maker:
Cree, Inc (CREE)

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W6NXD3K-0000 и другие

Компонент Описание Производитель PDF
W6NXD3K-0000
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc

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