| Компонент | Описание | Производитель | |
| BUL642D2 | High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network |
ON Semiconductor |
|
| BUL642D2G | High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network |
ON Semiconductor |
|
| BUL64A | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
Seme LAB |
|
| BUL64B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
Seme LAB |