1N5518B-1 и другие
| Компонент | Описание | Производитель | |
| 1N5518B | LOW REVERSE LEAKAGE CHARACTERISTICS |
Microsemi Corporation |
 |
| 1N5518B | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
Microsemi Corporation |
|
| 1N5518B | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
Microsemi Corporation |
|
| 1N5518B | 0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
|
| 1N5518B | LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Deuices Incorporated |
|
| 1N5518B-1 | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
Microsemi Corporation |
|
| 1N5518B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Deuices Incorporated |
|
| 1N5518B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
Microsemi Corporation |
|
| 1N5518BUR | Low Voltage Surface Mount 500 mW Avalanche Diodes |
Microsemi Corporation |
|
| 1N5518BUR | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
Microsemi Corporation |
|