K4R441869A datasheet

K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Название/Part No:

K4R441869A

Описание/Description:

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4R441869A и другие

Компонент	Описание	Производитель	PDF
K4R441869A	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869A-NMCK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung semiconductor
K4R441869AM-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung semiconductor
K4R441869AM-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung semiconductor
K4R441869AM-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung semiconductor
K4R441869AN-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung semiconductor
K4R441869AN-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung semiconductor
K4R441869AN-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung semiconductor