KP10N14 и другие
| Компонент | Описание | Производитель | |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
 |
| KP10N14 | TSS KP Series |
Shindengen Electric Mfg.Co.Ltd |
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| MTP10N10 | N-Channel Power MOSFETs, 11 A, 60-100 V |
Fairchild Semiconductor |
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| MTP10N10E | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
Motorola, Inc |
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| MTP10N10EL | Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 |
ON Semiconductor |
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| MTP10N10EL | TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS |
Motorola, Inc |
|
| MTP10N10ELG | Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 |
ON Semiconductor |
|
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
Motorola, Inc |
|
| PHP10N10E | PowerMOS transistor |
NXP Semiconductors |
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| PNP10N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 11 A. |
NXP Semiconductors |
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