SMCG6.5 и другие
| Компонент | Описание | Производитель | |
| K4R271669A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung semiconductor |
 |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung semiconductor |
|
| K4R271669B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung semiconductor |
|
| K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung semiconductor |
|
| K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung semiconductor |
|
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung semiconductor |
|
| K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung semiconductor |
|
| S-80913CLMC-G6HT2G | ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) |
Seiko Instruments Inc |
|
| S-80914CLMC-G6JT2G | ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) |
Seiko Instruments Inc |
|
| S-80915CLMC-G6KT2G | ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) |
Seiko Instruments Inc |
|