| Компонент | Описание | Производитель | |
| STT6601 | N & P-Channel Enhancement Mode Mos.FET |
SeCoS Halbleitertechnologie GmbH |
|
| STT6602 | N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET |
SeCoS Halbleitertechnologie GmbH |
|
| STT6603 | P-Channel Enhancement Mode Field Effect Transistor |
SamHop Microelectronics Corp. |