V30100C-E3/4W datasheet

V30100C-E3/4W - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Название/Part No:

V30100C-E3/4W

Описание/Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

V30100C-E3/4W и другие

Компонент	Описание	Производитель	PDF
V30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
V30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A	Vishay Siliconix
VB30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A	Vishay Siliconix
VB30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A	Vishay Siliconix
VI30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A	Vishay Siliconix
VI30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix