V20120SG-E3-4W datasheet - High-Voltage Trench MOS Barrier Schottky Rectifier | V20120SG-E3-4W.pdf by Vishay Siliconix | V20120SG-E3-4W documentation view on EHAM.RU

V20120SG-E3-4W - High-Voltage Trench MOS Barrier Schottky Rectifier

V20120SG-E3-4W datasheet - High-Voltage Trench MOS Barrier Schottky Rectifier

Название/Part No:

V20120SG-E3-4W

Описание/Description:

High-Voltage Trench MOS Barrier Schottky Rectifier

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

~/V20120SG-E3-4W.pdf

V20120SG-E3-4W и другие

Компонент	Описание	Производитель	PDF
V20120SG-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
V20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
V20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120SG-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VF20120SG-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VF20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VI20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix