VB20120SG datasheet

VB20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Название/Part No:

VB20120SG

Описание/Description:

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

VB20120SG и другие

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VB20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	Vishay Siliconix